Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeProductsFitaovana maoderina Smartrial SmartDdr3 Udimm Module Module

Ddr3 Udimm Module Module

Payment Type:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Order:
1 Piece/Pieces
Fitaovam-pitaterana:
Ocean,Air,Express,Land
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Toetra mampiavaka ny vokatra

Model No.NSO4GU3AB

Fahaizana manome sy fampahalalana fanamp...

Fitaovam-pitateranaOcean,Air,Express,Land

Payment TypeL/C,T/T,D/A

IncotermFOB,EXW,CIF

Fonosana sy fandefasana
Fivarotana fivarotana:
Piece/Pieces

4GB 1600mhz 240-pin DDR3 Udimm


Tantaran'ny fanovana

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Fandaharana ny latabatra fampahalalana

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Description
Hengstar tsy voamarina DDR3 SDRAM SDRAM Dimms (Double Dange Domino Dram Dram Dram Dram Dual In-Line Modules) dia ambany hery, haino aman-jery haingam-pandeha haingam-pandeha izay mampiasa fitaovana SDRAM avo lenta. NS04Gu3AB dia 512m x 64-bit ny laharana roa 4GB 4GB DDR300 CL11 1.5V SDRAM tsy voaroaka ny vokatra DIMM, miorina amin'ny singa enina ambin'ny folo 256m x 8-bit. Ny SPD dia namboarina ho an'ny Jedec Standard Latency DDdr3-1600 Fahafatesana amin'ny 11-11-11 amin'ny 1.5v. Isaky ny 240-pin Dimm dia mampiasa rantsantanana misy rantsantanana. Ny Dimm SDRAM tsy voaroaka dia natao hampiasaina ho fahatsiarovana lehibe rehefa napetraka ao amin'ny rafitra toy ny PC sy ny toeram-piasana.


Toetoetra
power famatsiana: vdd = 1.52v (1.425v ka hatramin'ny 1.575v)
vddq = 1.5v (1.425v ka hatramin'ny 1.575v)
800mhz Fck ho an'ny 1600MB / sec / PIN
8 Banky anatiny mahaleo tena
programmable cas latency: 11, 10, 9, 8, 7, 6
pprogrammable addgitive latency: 0, cl - 2, na cl - 1 famantaranandro
8-bit mialoha mialoha
Burst Length: 8
bi-discoral Data Data Data Strobe
inavernal (self) calibration; Calibration anatiny amin'ny alàlan'ny ZQ PIN (RZQ: 240 Ohm ± 1%)
 Fanginganana ny famaranana ny fampiasana ODT PIN
Fotoam-panavotana 7,8us ao ambany noho ny tatatra 85 ° C, 3.9us amin'ny 85 ° C <95 ° C
ASYNCHRONOUS RESET
Adjustabtable data-output tanjaka
fly-by topology
pcb: Height 1.18 "(30mm)
rohs dia mifehy sy halogen-maimaim-poana


Ny tarehimarika fanalahidy fototra

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Latabatra adiresy

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Famaritana PIN

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Fanamarihana : Ny latabatra famaritana PIN eto ambany dia lisitra feno amin'ny basy rehetra azo atao ho an'ny modules DDR3 rehetra. Ny pins rehetra voatanisa dia mety tsy tohanana amin'ity module ity. Jereo ny fanendrena PIN amin'ny fampahalalana manokana amin'ity module ity.


Diagram underal

4GB, 512Mx64 Module (2rank of x8)

1


2


Fanamarihana:
1. Ny baolina zq isaky ny singa DDR3 tsirairay dia mifandray amin'ny mpanohitra 240 ± 1% izay mifatotra amin'ny tany. Ampiasaina ho an'ny calibration ny singa amin'ny famaranana sy ny mpamily mpamily.



Modely Dimensions


Fijerena eo anoloana

3

Fijerena eo anoloana

4

Fanamarihana:
1.Ny refy rehetra dia ao amin'ny milimetatra (santimetatra); Max / Min na mahazatra (typle) izay misy azy.
2.Temerance amin'ny refy rehetra ± 0.15mm raha tsy voafaritra manokana.
3. Ny Dimensional Diagram dia natao ho an'ny fanondroana ihany.

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